Fabrication and Characterizations of Stretchable Thin-Film Transistor using Parylene Gate Insulating Layer
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: The Transactions of The Korean Institute of Electrical Engineers
سال: 2017
ISSN: 1975-8359
DOI: 10.5370/kiee.2017.66.4.721